Band Structure, Phonon Scattering and the Ultimate Performance of Single-Walled Carbon Nanotube Transistors

摘要

Semiconducting single-walled carbon nanotubes are studied in the diffusivetransport regime. The peak mobility is found to scale with the square of thenanotube diameter and inversely with temperature. The maximum conductance,corrected for the contacts, is linear in the diameter and inverse temperature.These results are in good agreement with theoretical predictions for acousticphonon scattering in combination with the unusual band structure of nanotubes.These measurements set the upper bound for the performance of nanotubetransistors operating in the diffusive regime.